FIAP is pleased to make available invited presentations from these FIAP-sponsored Symposia at the 2005 Los Angeles March Meeting:
Session D5: The Grand Challenge of Hydrogen Storage Chairs: Sunita Satyapal, DOE and Frederick E. Pinkerton, General Motors R&D Center
D5.1 – Energetics of Hydrogen Storage Reactions: The Power of DFT Jan F. Herbst, GM R&D Center
D5.2 – Novel Nanostructured Materials for Hydrogen Storage Anne Dillon, National Renewable Energy Laboratory
D5.4 – Destabilization of Light Element Hydrides with High Hydrogen Capacities: Metal Imides/Nitrides Weifang Luo, Sandia National Laboratory
D5.5 – Controlled Hydrogen Release from Ammonia Borane using Mesoporous Scaffolds Tom Autrey, Pacific Northwest National Laboratory
Session P14: Hydrogen Storage Focus Session 1 Chair: Frederick E. Pinkerton, General Motors R&D Center
P14.1 – A Variety of Metal-N-H Systems for Hydrogen Storage Ping Chen, National University of Singapore
Session L5: Emerging Devices and Materials for the Microelectronics Industry Chair: Alex Demkov, University of Texas, Austin
The Symposium goal was to attract attention to many opportunities for physicists to contribute to overcoming the challenges associated with the commercialization of emerging research devices and materials for nanoelectronic and optoelectronics applications (
www.itrs.net). Though rarely looked upon in this manner, robust industrial R&D is the bedrock of any healthy discipline such as physics. The present state of the semiconductor industry presents a golden opportunity for increased engagement by physicists. By shrinking the sizes of devices, semiconductor manufacturers have been successful in decreasing for each technology node the cost per functional throughput per unit area or unit volume. However, as devices continue to shrink, variations in device to device performance increase, leakage currents increase, and error rates increase. The second law of thermodynamics means that additional heat will be transferred with the errors and that entropy will increase. The heat dissipation may become a major bottleneck to sustain the CMOS platform and to add emerging research devices on this platform. The challenges for physicists are to suggest strategies in managing heat and in designing advanced devices for high performance systems. The invited speakers in this session discussed the critical needs of the semiconductor industry for the improved understanding and manufacturing of selected emerging research devices and materials, and emphasized the importance of synergy between synthesis, characterization, modeling and simulations.
A.A. Demkov and H.S. Bennett
L5.1 – The Search for New Information Processing Technologies Ralph K. Cavin, Semiconductor Research Corporation
L5.2 – Physics of Modern VLSI CMOS Dennis Buss, Texas Instruments, Inc.
L5.3 – Challenges for Materials to Support Emerging Research Devices Michael Garner, Intel Corporation
L5.4 – Novel Materials for Organic and Thin Film Electronics Rudolf Tromp, IBM T. J. Watson Research Center
L5.5 – nanoHUB.org – Towards On-line Simulation for Materials and Nanodevices by Design Gerhard Klimeck and Mark Lundstrom, Purdue University
Session N5: Applications of THz Radiation Chairs: Alan Todd, Advanced Energy Systems and Gwen P. Williams, Jefferson Lab
N5.1 – Characteristics and Applications of High Intensity Coherent THz Pulses from Linear Accelerators G. Lawrence Carr, Brookhaven National Laboratory
N5.2 – Submillimeter Wave Spectroscopy of Biological Macromolecules Tatiana Globus, University of Virginia
N5.3 – Homeland Security, Medical, Pharmaceutical, and Non-Destructive Testing Applications of Terahertz Radiation Colin Baker and Michael Kemp, TeraView, Ltd.
N5.5 – Terahertz Imaging and Security Applications Erich Grossman, National Institute of Standards and Technology
Note: The original presentations may have been modified for presentation in this format.